unisonic technologies co., ltd ut100n03-q power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2015 unisonic technologies co., ltd qw-r502-625.b 100a, 30v n-channel power mosfet ? description the ut100n03-q uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) < 5.3m ? @ v gs =10v, i d =50a * r ds(on) < 8.0m ? @ v gs =4.5v, i d =40a ? symbol 1.gate 3.source 2.drain to-220 1 to-263 1 dfn-8(5x6) 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 4 5 6 7 8 ut100n03l-ta3-t UT100N03G-TA3-T to-220 g d s - - - - - tube ut100n03l-tq2-t ut100n03g-tq2-t to-263 g d s - - - - - tube ut100n03l-tq2-r ut100n03g-tq2-r to-263 g d s - - - - - tape reel - ut100n03g-k08-5060-r dfn-8(56) s s s g d d d d tape reel note: pin assignment: g: gate d: drain s: source
ut100n03-q power mosfet unisonic technologies co., ltd 2 of 7 www.unisonic.com.tw qw-r502-625.b ? marking to-251 / to-252 / to-252d / to-263 dfn-8(56)
ut100n03-q power mosfet unisonic technologies co., ltd 3 of 7 www.unisonic.com.tw qw-r502-625.b ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current i d 100 a pulsed drain current (note 2) i dm 400 a single pulsed avalanche current (note 3) i as 35 a single pulsed avalanche energy (note 3) e as 875 mj power dissipation to-220/to-263 p d 100 w dfn-8(56) 21 w derate above 25c to-220/to-263 0.67 w/c dfn-8(56) 0.168 w/c junction temperature t j +175 c strong temperature t stg -55 ~ +175 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pulse width limited by maximum junction temperature 3. l = 0.5mh, i as = 35a, v dd = 25v, r g = 25 ? , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient to-220/to-263 ja 62.5 c/w dfn-8(56) 40.3 (note 1, 2) c/w junction to case to-220/to-263 jc 1.5 c/w dfn-8(56) 6 (note 1, 2) c/w notes: 1. maximum under steady state conditions is 90 c/w. 2. surface mounted on 1" x 1" fr4 board.
ut100n03-q power mosfet unisonic technologies co., ltd 4 of 7 www.unisonic.com.tw qw-r502-625.b ? electrical characteristics (t j =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =250 a 30 v drain-source leakage current i dss v ds =30 v,v gs =0 v 1 a gate-source leakage current i gss v ds =0 v, v gs = 20 v 100 na on characteristics (note2) gate threshold voltage v gs ( th ) v ds =v gs , i d =250 a 1 3 v static drain-source on-resistance r ds(on) v gs =10 v, i d =50 a 5.3 m ? v gs =4.5 v, i d =40 a 8 dynamic parameters (note3) input capacitance c iss v ds =15v, v gs =0v, f=1.0mhz 3800 pf output capacitance c oss 700 reverse transfer capacitance c rss 500 switching parameters (note3) total gate charge q g v ds =15v, v gs =5v, i d =16a 400 nc gate source charge q gs 80 gate drain charge q gd 100 turn-on delay time t d ( on ) v dd =15v, i d =1a, r gen =6 ? v gs =10 v 180 ns turn-on rise time t r 400 turn-off delay time t d ( off ) 480 turn-off fall-time t f 400 source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s =20 a,v gs =0 v 1.5 v drain-source diode forward current i s 90 a notes: 1. pulse test : pulse width < 300 s, duty cycle < 2% 2. guaranteed by design, not subject to production testing
ut100n03-q power mosfet unisonic technologies co., ltd 5 of 7 www.unisonic.com.tw qw-r502-625.b ? test circuit and waveform
ut100n03-q power mosfet unisonic technologies co., ltd 6 of 7 www.unisonic.com.tw qw-r502-625.b ? typical characteristics 50 40 30 20 10 0 01 2 345 4 3 2 1 0 0 20 40 60 80 100 v gs =10,8,6,4v v gs =3v 25 t j =125 -55 output characteristics drain current,i d (a) drain to source voltage,v ds (v) drain current,i d (a) transfer characteristics gate to source voltage,v gs (v) normalized gate-source threshold voltage,v th normalized on-resistance, r ds(on) (ohms) gate to source voltage,v gs (v) c a p a c i t a n c e , c ( p f )
ut100n03-q power mosfet unisonic technologies co., ltd 7 of 7 www.unisonic.com.tw qw-r502-625.b ? typical characteristics(cont.) drain current,i d (a) source-drain current,i s (a) 10 0 10 -1 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 p dm t 1 t 2 square wave pulse duration (sec) normalized thermal transient impedanc curve d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 1.r jc (t)=r(t)*r jc 2.r jc =see datasheet 3.t jm -t c =p*r jc (t) 4.duty cycle,d=t 1 /t 2 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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